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INN650TA050AH

650V GaN Enhancement-mode Power Transistor

1. Datasheet

650V GaN-on-Silicon Enhancement-mode Power Transistor in TOLL package.

1.1 Features

Enhancement mode transistor-Normally off power switch
Ultra high switching frequency
No reverse-recovery charge
Low gate charge, low output charge
Qualified for industrial applications according to JEDEC Standards
ESD safeguard
RoHS, Pb-free, REACH-compliant

1.2 Applications

AC-DC converters
DC-DC converters
DC-AC converters
High density power conversion
High efficiency power conversion

2. Reliability Tests

Platform Product (INN650TA030AH)
Spin-off Product (INN650TA050AH)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=150°C, VDS= 560V	77 x 1	0 Fail	Pass
HTGB	T=150°C, VGS= 7V	77 x 1	0 Fail	Pass
HTGB(-)	T=150°C, VGS= -6V	77 x 1	0 Fail	Pass
LTRB	T=-40°C, VDS= 650V	77 x 1	0 Fail	Pass
LTGB	T=-40°C, VGS= 7V	77 x 1	0 Fail	Pass
LTGB (-)	T=-40°C, VGS= -6V	77 x 1	0 Fail	Pass
TC	-55 to +150°C, Air	77 x 3	0 Fail	Pass
HAST	T=130°C, RH=85%, VDS=100V	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VDS=560V	77 x 3	0 Fail	Pass
HTSL	T=150°C	77 x 3	0 Fail	Pass
IOL	ΔTj ≥ 100℃, Ton=Toff=2min	77 x 1	0 Fail	Pass
Solderability	1. Precondition: 8H 2. Pb-free, 245±5°C, 5±0.5S.	10 x 1	0 Fail	Pass
HTOL	Vplatform=450V,Irms=15A, Fre=65KHZ,Tj=125°C	8sets x 3	0 Fail	Pass
MSL3	T=30°C, RH=60%,3 x reflow	25 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 2
CDM	All Pins	3 x 1	0 Fail	Class C3
Note: Package type Spin off have the same package process and design rules

Parameter	Value
VDS,max	650V
RDS(on),max @ VGS = 6 V	50mΩ
QG,typ @ VDS = 400 V	12.5nC
ID,pulse	84A
QOSS @ VDS = 400 V	150nC
Qrr @ VDS = 400 V	0nC

Downloads

Datasheet

Product Reliability Report