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INN100EA035A

100V Enhancement-mode GaN Power Transistor

1. General description

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in En-FCLGA with 3.3mm x 3.3mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Industry Application
Very low gate charge
Ultra-low on resistance
Very small footprint

1.2 Applications

High frequency DC-DC converter
High density DC/DC power module
Synchronous Rectification
Motor driver
Solar system MPPT

Parameter	Value
V_DS,max	100V
R_DS(on),max @ V_GS = 5 V	3.5mΩ
Q_G,typ @ V_DS = 50 V	7.6nC
I_D,pulse	230A
Q_OSS @ V_DS = 50 V	42nC

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Product Reliability Report

SPICE Model