Products

INN700TA105C

700V GaN Enhancement-mode Power Transistor

1. General description

700V GaN-on-Silicon Enhancement-mode Power Transistor in TOLL package.

1.1 Features
  • Enhancement mode transistor-Normally off power switch
  • Ultra high switching frequency
  • No reverse-recovery charge
  • Low gate charge, low output charge
  • Qualified for industrial applications according to JEDEC Standards
  • ESD safeguard
  • RoHS, Pb-free, REACH-compliant
1.2 Applications
  • AC-DC converters
  • DC-DC converters
  • Totem pole PFC
  • Fast battery charging
  • High density power conversion
  • High efficiency power conversion

ParameterValue
VDS,max 700V
RDS(on),max @ VGS = 6 V 105mΩ
QG,typ @ VDS = 400 V 4.8nC
ID,pulse 43.5A
QOSS @ VDS = 400 V 56nC
Qrr @ VDS = 400 V 0nC
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