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INN100W032B

100V Enhancement-mode GaN Power Transistor

1. General description

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in Solder Ball WLCSP with 3.5 mm x 2.13 mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Very small package size
Zero reverse recovery charge

1.2 Applications

Synchronous rectification
Class-D audio
High frequency DC-DC converter
Communication base station
Motor driver

Parameter	Value
V_DS,max	100V
R_DS(on),max @ V_GS = 5V	3.2mΩ
Q_G,typ @ V_DS = 50V	9.2nC
I_D,pulse	230A
Q_OSS @ V_DS = 50V	50nC

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Datasheet

Product Reliability Report