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INN900D350B

900V GaN Enhancement-mode Power Transistor

1. General description

900V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size.

1.1 Features

Enhancement mode transistor-Normally off power switch
Ultra high switching frequency
No reverse-recovery charge
Low gate charge, low output charge
Qualified for industrial applications according to JEDEC Standards
ESD safeguard
RoHS, Pb-free, REACH-compliant

1.2 Applications

AHB/LLC/ACF Converter for Fast battery charger
QR Flyback Converter for Fast battery charger
Optimized to withstand high voltage transients in unstable mains network

Parameter	Value
VDS,max	900V
RDS(on),max @ VGS = 6 V	350mΩ
QG,typ @ VDS = 400 V	1.5nC
ID,pulse	10A
QOSS @ VDS = 400 V	16.5nC
Qrr @ VDS = 400 V	0nC

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Datasheet