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INV100FQ030A

100V Bi-directional Enhancement-mode Power Transistor.

1. Datasheet

Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4mm x 6mm package size.

1.1 Features

Bi-directional blocking capability
GaN-on-Silicon E-mode HEMT technology
Ultra-low on resistance

1.2 Applications

BMS battery protection
High side load switch in bi-directional converter
Switch circuits in multiple power supplier system

2. Reliability Tests

Platform (V100E2.0I)
Product (INV100FQ030A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=150°C, VD=80V, 1000hrs	77 x 3	0 Fail	Pass
HTGB	T=150°C, VG=5.5V, 1000hrs	77 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1B
CDM	All Pins	3 x 1	0 Fail	Class C2a
DHTOL	Vg=5V, Load current=16A(DC), Tj=125°C, Always on	8set x 3	0 Fail	Pass
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
HTS	T=150°C	77 x 3	0 Fail	Pass
PLTC	-55 to +150°C, Air, 1000Cys.	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VD=120V, 1000hrs	77 x 3	0 Fail	Pass
HAST	T=130°C, RH=85%, VD=42V, 96hrs	77 x 3	0 Fail	Pass
IOL	ΔTj ≥100°C, ton/ toff=2 min /2 min, 7500cyc	77*3	0 Fail	Pass

3. 16S/120A BMS Low-Side Protect Reference Design

3.1 Topology

3.2 Key specifications

With battery balancing；

AFE IC：SH367309；

VBAT：Max 16S，100A without heatsink，120A with heatsink

3.3 Applications

E-Bike、Energy storage and other 48V battery systems

Parameter	Value
V_DD,max	100V
R_DD(on),max @ V_G = 5 V	3.2mΩ
Q_G,typ @ V_DD = 50 V	90nC
I_D,DC	100A

Downloads

Datasheet

Product Reliability Report

SPICE Model

Demo Manual >: INNDBMS120LS1