1.1 Features
- AEC-Q101 Qualified
- GaN-on-Silicon E-mode HEMT technology
- Very low gate charge
- Very small footprint
Automotive 40V Enhancement-mode GaN Power Transistor
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 3 mm x 4 mm package size.
Platform (S040E2.5_Auto) | ||||
---|---|---|---|---|
Product (INN040FQ045A-Q) | ||||
Test Items | Test Conditions | Sample Size (Unit x Lot) | #Fail | Result |
HTRB | Ta=150°C, Vd=40V, VG=VS=0V, 1000hrs | 77*3 | 0 Fail | Pass |
HTGB(+) | Ta=150°C, VG=6V, VD=VS=0V, 1000hrs | 77*3 | 0 Fail | Pass |
HTGB(-) | Ta=150°C, VG=-4V, VD=VS=0V, 1000hrs | 77*3 | 0 Fail | Pass |
LTRB | Ta=-40°C, VD=40V, VG=VS=0V, 1000hrs | 77*3 | 0 Fail | Pass |
LTGB(+) | Ta=-40°C, VG=6V, VD=VS=0V, 1000hrs | 77*3 | 0 Fail | Pass |
ESD-HBM | Ta=25°C | 30*1 | 0 Fail | Class 1B |
ESD-CDM | Ta=25°C | 30*1 | 0 Fail | Class 2a |
MSL1 | T=85°C, RH=85%, 3 x reflow, 168hrs | 25*3 | 0 Fail | Pass |
H3TRB | Ta=85°C, 85%RH, Vd=32V, 1000hrs | 77*3 | 0 Fail | Pass |
TC | -55°C /+150°C, 15°C /min, 5mins dwell time, 1000cycles | 77*3 | 0 Fail | Pass |
TCDT | Random 2parts after TC, analysis the highest stress point and related gate, drain, source points | 2*3 | 0 Fail | Pass |
uHAST | Ta=130°C, 85%RH, 96hrs | 77*3 | 0 Fail | Pass |
TS | Ta=-55°C to 150°C, Transfer time:10s, 15mins dwell time, 1000cycles | 77*3 | 0 Fail | Pass |
IOL | ΔTj =125°C, ton/ toff=1 min /5 min, 5000cyc | 77*3 | 0 Fail | Pass |
D-HTOL | BUCK, Vin=32V, Vout=13.5V, Iout=7A, Fsw=1.2MHz, Tj=125°C, 1000hrs | 8set*3 | 0 Fail | Pass |
RSH | 260±5℃, 10±1s | 45*1 | 0 Fail | Pass |
Solderability | 1.Precondition Condition C (8hrs) 2.Temperature and time: Pb-free, 245±5°C, 5±0.5s |
22*3 | 0 Fail | Pass |
DPA | Random sample of parts that have successfully completed H3TRB or HAST, and TC | 4*1 | 0 Fail | Pass |
Parameter | Value |
---|---|
VDS,max | 40V |
RDS(on),max @ VG = 5 V | 4.5mΩ |
QG,typ @ VDS = 20 V | 6.2nC |
ID, Pulse | 160A |
QOSS@ VDS = 20V | 15nC |