Products

INN040FQ045A-Q

Automotive 40V Enhancement-mode GaN Power Transistor

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 3 mm x 4 mm package size.

1.1 Features
  • AEC-Q101 Qualified
  • GaN-on-Silicon E-mode HEMT technology
  • Very low gate charge
  • Very small footprint
1.2 Applications
  • High frequency DC-DC converter
  • Point of Load
  • RF envelope tracking
  • USB charger
  • Mobile power bank
  • Motor driver

2. Reliability Tests

Platform (S040E2.5_Auto)
 Product (INN040FQ045A-Q)
Test ItemsTest ConditionsSample Size (Unit x Lot)#FailResult
HTRB Ta=150°C, Vd=40V, VG=VS=0V, 1000hrs 77*3 0 Fail Pass
HTGB(+) Ta=150°C, VG=6V, VD=VS=0V, 1000hrs 77*3 0 Fail Pass
HTGB(-) Ta=150°C, VG=-4V, VD=VS=0V, 1000hrs 77*3 0 Fail Pass
LTRB Ta=-40°C, VD=40V, VG=VS=0V, 1000hrs 77*3 0 Fail Pass
LTGB(+) Ta=-40°C, VG=6V, VD=VS=0V, 1000hrs 77*3 0 Fail Pass
ESD-HBM Ta=25°C 30*1 0 Fail Class 1B
ESD-CDM Ta=25°C 30*1 0 Fail Class 2a
MSL1 T=85°C, RH=85%, 3 x reflow, 168hrs 25*3 0 Fail Pass
H3TRB Ta=85°C, 85%RH, Vd=32V, 1000hrs 77*3 0 Fail Pass
TC -55°C /+150°C, 15°C /min, 5mins dwell time, 1000cycles 77*3 0 Fail Pass
TCDT Random 2parts after TC, analysis the highest stress point and related gate, drain, source  points  2*3 0 Fail Pass
uHAST Ta=130°C, 85%RH, 96hrs 77*3 0 Fail Pass
TS Ta=-55°C to 150°C, Transfer time:10s, 15mins dwell time, 1000cycles 77*3 0 Fail Pass
IOL ΔTj =125°C, ton/ toff=1 min /5 min, 5000cyc 77*3 0 Fail Pass
D-HTOL BUCK, Vin=32V, Vout=13.5V, Iout=7A, Fsw=1.2MHz, Tj=125°C, 1000hrs 8set*3 0 Fail Pass
RSH 260±5℃, 10±1s 45*1 0 Fail Pass
Solderability 1.Precondition Condition C (8hrs)
2.Temperature and time: Pb-free, 245±5°C, 5±0.5s
22*3 0 Fail Pass
DPA Random sample of parts that have successfully completed H3TRB or HAST, and TC 4*1 0 Fail Pass

ParameterValue
VDS,max 40V
RDS(on),max @ VG = 5 V 4.5mΩ
QG,typ @ VDS = 20 V 6.2nC
IDPulse 160A
QOSS@ VDS = 20V 15nC
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