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INN150EQ070A

150V Enhancement-mode GaN Power Transistor

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in En-FCQFN with 4.0 mm x 6.0 mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Industry Application
Very low gate charge
Ultra-low on resistance
Very small footprint

1.2 Applications

High frequency DC-DC converter
Solar Systems optimizers and microinverters
PD Charger and PSU Synchronous Rectification
Telecom Power Supply
Motor driver

2. Reliability Tests

Platform (S150E2.0I)
Product (INN150EQ070A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	0 Fail	25 x 5	Pass
HTS	T=150℃	0 Fail	77 x 4	Pass
TC	-55 to +150°C, Air, 1000Cys.	0 Fail	77 x 5	Pass
H³TRB	T=85°C, RH=85%, VD=80V/120V, 1000hrs	0 Fail	77 x 4	Pass
HAST	T=130°C, RH=85%, VD=42V, 96hrs	0 Fail	77 x 4	Pass

Parameter	Value
V_DS,max	150V
R_DS(on),max @ V_GS = 5 V	7mΩ
Q_G,typ @ V_DS = 75 V	13nC
I_D,pulse	160A
Q_OSS @ V_DS = 75 V	75nC

Downloads

Datasheet

Product Reliability Report

SPICE Model