Products

INN700TK140C

700V GaN Enhancement-mode Power Transistor

1. Datasheet

700V GaN-on-Silicon Enhancement-mode Power Transistor in TO-252 package.

1.1 Features
  • Enhancement mode transistor-Normally off power switch
  • Ultra high switching frequency
  • No reverse-recovery charge
  • Low gate charge, low output charge
  • Qualified for industrial applications according to JEDEC Standards
  • ESD safeguard
  • RoHS, Pb-free, REACH-compliant
1.2 Applications
  • AC-DC converters
  • DC-DC converters
  • Totem pole PFC
  • Fast battery charging
  • High density power conversion
  • High efficiency power conversion

2. Reliability Tests

Innoscience’s E-mode GaNFETs were subjected to a variety of reliability test under the condition referenced to typical for silicon-based power MOSFETs.These test items and results were shown as below:

Platform (  INN650D080BS/INN700D080BS)
Test ItemsTest Conditions

Sample Size

(Unit x Lot)

#FailResult
HTRB T=150°C, VDS= 560V, 1000hrs 77 x 3 0 Fail Pass
HTGB T=150°C, VGS= 7V, 1000hrs 77 x 3 0 Fail Pass
*HTGB(-) T=150°C, VGS= -6V, 1000hrs 77 x 3 0 Fail Pass
TC -55 to +150°C, Air, 1000Cys 77 x 3 0 Fail Pass
HAST T=130°C, RH=85%, VDS=100V, 96hrs 77 x 3 0 Fail Pass
H3TRB T=85°C, RH=85%, VDS=560V, 1000hrs 77 x 3 0 Fail Pass
MSL3 T=30°C, RH=60%, 3 x reflow, 192hrs 25 x 3 0 Fail Pass
HBM All Pins 3 x 1 0 Fail Class 2
CDM All Pins 3 x 1 0 Fail Class C3
HTOL (LLC) Tj=125°C, Input: 220 Vac, Vout=48V, Vplat=400V, fsw=130KHz 10 x 3 0 Fail Pass
HTOL(QR-PFC) Tj=125°C, Input: 90 Vac, Output: 20V/6.5A, F=120KHz(QR)/100KHz(PFC) 10 x 3 0 Fail Pass
Note:*HTGB(-)was optional test item for device with bidirectional ESD design.

Spin-off Product

Test ItemsTest Conditions

Sample Size

(Unit x Lot)

#FailResult
HTRB T=150°C, VDS= 560V, 168hrs 77 x 1 0 Fail Pass
HTGB T=150°C, VGS= 7V, 168hrs 77 x 1 0 Fail Pass
New Package Type Qualification test     
Test ItemsTest Conditions

Sample Size

(Unit x Lot)

#FailResult
TC -55 to +150°C, Air, 1000Cys 77 x 3 0 Fail Pass
HAST T=130°C, RH=85%, VDS=100V, 96hrs 77 x 3 0 Fail Pass
H3TRB T=85°C, RH=85%, VDS=560V, 1000hrs 77 x 3 0 Fail Pass
MSL3 T=30°C, RH=60%, 3 x reflow, 192hrs 25 x 3 0 Fail Pass
Note: Package type Spin off have the same package process and design rules 

ParameterValue
VDS,max 700V
RDS(on),max @ VGS = 6 V 140mΩ
QG,typ @ VDS = 400 V 3.5nC
ID,pulse 32A
QOSS @ VDS = 400 V 33nC
Qrr @ VDS = 400 V 0nC
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