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INN100W135A-Q

Automotive 100V Enhancement-mode GaN Power Transistor

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in WLCSP with 2.13 mm x 1.63mm package size.

1.1 Features

AEC-Q101 Qualified
GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Very small package size
Zero reverse recovery charge

1.2 Applications

LiDAR Application
High Power Density DC-DC Converters
Class-D Audio
High Intensity Headlamps

Parameter	Value
V_DS,max	100V
R_DS(on),max @ V_G = 5 V	13.5mΩ
Q_G,typ @ V_DS = 50 V	3.2nC
I_{DS, Pulse}	75A
Qoss@ Vds = 50V	20nC

Downloads

Datasheet

SPICE model