Products

INN100FQ016A

100V Enhancement-mode GaN Power transistor

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0 mm x 6.0 mm package size.

1.1 Features
  • GaN-on-Silicon E-mode HEMT technology
  • Very low gate charge
  • Ultra-low on resistance
  • Very small footprint
1.2 Applications
  • High frequency DC-DC converter
  • Point of Load
  • RF envelope tracking
  • PC charger
  • Mobile power bank
  • Motor driver

2. Reliability Tests

Platform (S100E2.0)
 Product (INN100FQ016A)
Test Items Test Conditions Sample Size (Unit x Lot) #Fail Result
MSL3 T=30°C, RH=60%, 3 x reflow 0 Fail 25 x 3 Pass
HTRB T=150°C, VD=80V 0 Fail 77 x 1 Pass
HTGB T=150°C, VG=5.5V 0 Fail 77 x 1 Pass
PLTC -55to +150 0 Fail 77 x 3 Pass
H3TRB T=85°C, RH=85%, VD=80V/120V 0 Fail 77 x 3 Pass
HAST T=130°C, RH=85%, VD=42V 0 Fail 77 x 3 Pass
HTSL T=150°C 0 Fail 77 x 3 Pass
Solderability 1.Precondition : 8H
2. Pb-feee,245±5,5±0.5S.
0 Fail 10 x 1 Pass
HBM All Pins 0 Fail 3 x 1 Class 2
CDM All Pins 0 Fail 3 x 1 Class C3

ParameterValue
VDS,max 100V
RDS(on),max @ VGS = 5 V 1.8mΩ
QG,typ @ VDS = 50 V 22nC
ID,pulse 320A
QOSS @ VDS = 50 V 125nC
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