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INN100W027A

100V Enhancement-mode GaN Power Transistor

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor(HEMT) in Solder Bar WLCSP with 4.45mm x 2.3mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on Resistance
Very small package size
Zero reverse recovery charge

1.2 Applications

Synchronous rectification
Class-D audio
High frequency DC-DC converter
Communication base station
Motor driver

2. Reliability Tests

Innoscience’s E-mode GaNFETs were subjected to a variety of reliability test under the condition referenced to typical for silicon-based power MOSFETs.These test items and results were shown as below:

Platform (S100E2.0)
Product (INN100W027A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL1	T=85°C, RH=85%, 3 x reflow	0 Fail	25 x 3	Pass
HTRB	T=150°C, VD=80V	0 Fail	77 x 1	Pass
HTGB	T=150°C, VG=5.5V	0 Fail	77 x 1	Pass
BLTC	-40 to +125°C	0 Fail	77 x 1	Pass
H³TRB	T=85°C, RH=85%, VD=80V	0 Fail	77 x 1	Pass
HAST	T=130°C, RH=85%, VD=42V	0 Fail	77 x 1	Pass
HTSL	T=150°C	0 Fail	77 x 1	Pass
HTOL	LLC, Vin=60V, Fsw=1MHz, Tj＞125°C	0 Fail	10 x 1	Pass
HBM	All Pins	0 Fail	3 x 1	Class 1C
CDM	All Pins	0 Fail	3 x 1	Class C2a

Parameter	Value
V_DS,max	100V
R_DS(on),max @ V_GS = 5 V	2.7mΩ
Q_G,typ @ V_DS = 50 V	13nC
I_{D,pulse max}	320A
Q_OSS @ V_DS = 50 V	77nC

Downloads

Datasheet

Product Reliability Report

SPICE Model