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INN040FQ043A

40V Enhancement-mode GaN Enhancement-mode Power Transistor

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 3 mm x 4 mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Very small footprint

1.2 Applications

High frequency DC-DC converter
Point of Load
RF envelope tracking
PC charger
Mobile power bank
Motor driver

2. Reliability Tests

Platform (S040E2.5)
Product (INN040FQ043A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL3	Ta=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
HTRB	Tj=150°C, VD=40V, 1000hrs	77 x 3	0 Fail	Pass
LTRB	Tj=-40°C, VD=32V, 1000hrs	77 x 3	0 Fail	Pass
HTGB(+)	Tj=150°C, VG=6.0V, 1000hrs	77 x 3	0 Fail	Pass
HTGB(-)	Tj=150°C, VG=-4.0V, 1000hrs	77 x 3	0 Fail	Pass
LTGB(+)	Tj=-40°C, VG=6.0V, 1000hrs	77 x 3	0 Fail	Pass
LTGB(-)	Tj=-40°C, VG=-4.0V, 1000hrs	77 x 3	0 Fail	Pass
TC	-40 to +125°C, Air, 1000Cys	77 x 3	0 Fail	Pass
H³TRB	Ta=85°C, RH=85%, VD=32V, 1000hrs	77 x 3	0 Fail	Pass
HAST	T=130°C, RH=85%, Vd=32V, 96hrs	77 x 3	0 Fail	Pass
uHAST	T=130°C, RH=85%, 96hrs	77 x 3	0 Fail	Pass
Solderability	Pre-Con: 8hrs Pb-free: 245±5°C, 5±0.5s	25 x 3	0 Fail	Pass
DHTOL	BUCK, Vin=32V, Vout=13.5V, Iout=10A, Fsw=1.2MHz, Tj=125°C, 1000hrs	22 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1B
CDM	All Pins	3 x 1	0 Fail	Class 2a

3. 150W Car/Notebook charger Buck-Boost Reference Design

3.1 Topology

3.2 Key specifications

High efficnecy 98.1% @24Vin、19.2V/6A、600kHz；

Adjustable switching frequency: 400KHz~1200KHz

Adjustable output voltage：3.3V~19.2V

3.3 Applications

Car Charger；

Notebooks；

Tablet PCs

Parameter	Value
V_DS,max	40V
_RDS(on),max @ V_G = 5 V	4.3mΩ
Q_G,typ @ V_DS = 20 V	6.2nC
I_D_, Pulse	160A
Q_OSS@ V_{DS =}20V	14nC

Downloads

Datasheet

Product Reliability Report

Demo Manual >: INNDDD150A1

Video / Picture