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650V GaN Enhancement-mode Power Transistor

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size

Platform ( INN650D080BS/INN700D080BS)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=150°C, VDS= 560V, 1000hrs	77 x 3	0 Fail	Pass
HTGB	T=150°C, VGS= 7V, 1000hrs	77 x 3	0 Fail	Pass
*HTGB(-)	T=150°C, VGS= -6V, 1000hrs	77 x 3	0 Fail	Pass
TC	-55 to +150°C, Air, 1000Cys	77 x 3	0 Fail	Pass
HAST	T=130°C, RH=85%, VDS=100V, 96hrs	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VDS=560V, 1000hrs	77 x 3	0 Fail	Pass
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 2
CDM	All Pins	3 x 1	0 Fail	Class C3
HTOL (LLC)	Tj=125°C, Input: 220 Vac, Vout=48V, Vplat=400V, fsw=130KHz	10 x 3	0 Fail	Pass
HTOL（QR-PFC）	Tj=125°C, Input: 90 Vac, Output: 20V/6.5A, F=120KHz(QR)/100KHz(PFC)	10 x 3	0 Fail	Pass
Note:*HTGB(-)was optional test item for device with bidirectional ESD design.
Spin-off Product
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=150°C, VDS= 560V, 168hrs	77 x 1	0 Fail	Pass
HTGB	T=150°C, VGS= 7V, 168hrs	77 x 1	0 Fail	Pass
New Package Type Qualification test
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
TC	-55 to +150°C, Air, 1000Cys	77 x 3	0 Fail	Pass
HAST	T=130°C, RH=85%, VDS=100V, 96hrs	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VDS=560V, 1000hrs	77 x 3	0 Fail	Pass
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
Note: Package type Spin off have the same package process and design rules