650V GaN Enhancement-mode Power Transistor
650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 5 mm × 6 mm size
Innoscience’s E-mode GaNFETs were subjected to a variety of reliability test under the condition referenced to typical for silicon-based power MOSFETs.These testitems and resultswere shown as below:
| Platform ( INN650D140A ) | ||||
|---|---|---|---|---|
| Test Items | Test Conditions | Sample Size (Unit x Lot) | #Fail | Result |
| HTRB | T=150°C, VDS= 520V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTGB | T=150°C, VGS= 6.5V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| TC | -55 to +150°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
| HAST | T=130°C, RH=85%, VDS=100V, 96hrs | 77 x 3 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VDS=520V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 3 | 0 Fail | Pass |
| HBM | All Pins | 3 x 1 | 0 Fail | Class 2 |
| CDM | All Pins | 3 x 1 | 0 Fail | Class C3 |
| HTOL（QR-PFC） | Tj=125°C, Input: 90 Vac, Output: 20V/6.5A, F=120KHz(QR)/100KHz(PFC) | 10 x 3 | 0 Fail | Pass |
|
Spin-off Product( INN650DA140A) | ||||
| Test Items | Test Conditions |
Sample Size/Product (Unit x Lot)/Product | #Fail | Result |
| HTRB | T=150°C, VDS= 520V, 168hrs | 77 x 1 | 0 Fail | Pass |
| HTGB | T=150°C, VGS= 6.5V, 168hrs | 77 x 1 | 0 Fail | Pass |
| TC | -55 to +150°C, Air, 1000Cys | 77 x 1 | 0 Fail | Pass |
| HAST | T=130°C, RH=85%, VDS=100V, 96hrs | 77 x 1 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VDS=520V, 1000hrs | 77 x 1 | 0 Fail | Pass |
| MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 1 | 0 Fail | Pass |
High efficiency：95.2%
Small size：60*60*20mm（PCBA）
High power density：29W/in3（PCBA）
PD3.1 protocol support
Easy to manufacture and low cost
Mobile phone fast charger
Loptop Power Supply
| Parameter | Value |
|---|---|
| VDS,max | 650V |
| RDS(on),max @ VGS = 6 V | 140mΩ |
| QG,typ @ VDS = 400 V | 3.5nC |
| ID,pulse | 32A |
| QOSS @ VDS = 400 V | 33nC |
| Qrr @ VDS = 400 V | 0nC |
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