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1.1 特性
- 双向导通能力
- 硅基氮化镓增强型高电子迁移率晶体管技术
- 极低的导通电阻
产品
INN040W048A
40V双向导通增强型场效应晶体管
1. 产品描述
基于先进的VGaN技术及极低导通电阻的双向导通的硅基氮化镓增强型高电子迁移率晶体管
1.2 应用市场
- 高压侧负荷开关
- 智能手机USB端口的过压保护
- 多电源系统中的开关电路
2. 可靠性测试
英诺赛科的增强型氮化镓场效应晶体管在参考硅基功率MOSFET的条件下经过了全面的可靠性测试，这些测试项目及结果如下所示：
| Platform (B040E2.5) | ||||
|---|---|---|---|---|
| Product (INN040W048A) | ||||
| Test Items | Test Conditions | Sample Size (Unit x Lot) | #Fail | Result |
| MSL1 | T=85°C, RH=85%, 3 x reflow, 168hrs | 25 x 2 | 0 Fail | Pass |
| HTRB | T=125°C, VD1=32V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTRB | T=125°C, VD2=32V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTGB | T=125°C, VG=5.5V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| TC | -40 to +125°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VD1=32V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VD2=32V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTSL | T=150°C, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTOL | Tj=125°C, Load current=7A, 1000hrs | 32 x 3 | 0 Fail | Pass |
| Drop test | Accelerometer: 1500G Durations: 0.5ms, 90Drops | 77 x 1 | 0 Fail | Pass |
| Solderability | Pre-Con: 8hrs Pb-free: 245±5°C, 5±0.5s | 25 x 3 | 0 Fail | Pass |
| HBM | All Pins | 3 x 1 | 0 Fail | Class 1A |
| CDM | All Pins | 3 x 1 | 0 Fail | Class C2b |
3. VGaN For OVP Application（Dual）参考方案
3.1 拓扑图
3.2 关键规格
Vin：8~22V
Controller IC:SC8571
Iomax:14A
3.3 应用领域
Bi-directional switch
OVP Application
OCP Application
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