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1.1 特性
- AEC-Q101认证
- 硅基 GaN E-Mode 技术
- 极低的栅极电荷
- 占板面积非常小
产品
INN040FQ045A-Q
车规级40V增强型GaN功率晶体管
1. 产品描述
采用FCQFN封装的硅基氮化镓增强型高电子迁移率晶体管（HEMT），尺寸为3mm x 4mm。
1.2 应用市场
- 高频DC-DC转换器
- 负载点
- 射频包络跟踪
- USB充电器
- 移动电源
- 电机驱动器
2. 可靠性测试
| Platform (S040E2.5_Auto) | ||||
|---|---|---|---|---|
| Product (INN040FQ045A-Q) | ||||
| Test Items | Test Conditions | Sample Size (Unit x Lot) | #Fail | Result |
| HTRB | Ta=150°C, Vd=40V, VG=VS=0V, 1000hrs | 77*3 | 0 Fail | Pass |
| HTGB(+) | Ta=150°C, VG=6V, VD=VS=0V, 1000hrs | 77*3 | 0 Fail | Pass |
| HTGB(-) | Ta=150°C, VG=-4V, VD=VS=0V, 1000hrs | 77*3 | 0 Fail | Pass |
| LTRB | Ta=-40°C, VD=40V, VG=VS=0V, 1000hrs | 77*3 | 0 Fail | Pass |
| LTGB(+) | Ta=-40°C, VG=6V, VD=VS=0V, 1000hrs | 77*3 | 0 Fail | Pass |
| ESD-HBM | Ta=25°C | 30*1 | 0 Fail | Class 1B |
| ESD-CDM | Ta=25°C | 30*1 | 0 Fail | Class 2a |
| MSL1 | T=85°C, RH=85%, 3 x reflow, 168hrs | 25*3 | 0 Fail | Pass |
| H3TRB | Ta=85°C, 85%RH, Vd=32V, 1000hrs | 77*3 | 0 Fail | Pass |
| TC | -55°C /+150°C, 15°C /min, 5mins dwell time, 1000cycles | 77*3 | 0 Fail | Pass |
| TCDT | Random 2parts after TC, analysis the highest stress point and related gate, drain, source points | 2*3 | 0 Fail | Pass |
| uHAST | Ta=130°C, 85%RH, 96hrs | 77*3 | 0 Fail | Pass |
| TS | Ta=-55°C to 150°C, Transfer time:10s, 15mins dwell time, 1000cycles | 77*3 | 0 Fail | Pass |
| IOL | ΔTj =125°C, ton/ toff=1 min /5 min, 5000cyc | 77*3 | 0 Fail | Pass |
| D-HTOL | BUCK, Vin=32V, Vout=13.5V, Iout=7A, Fsw=1.2MHz, Tj=125°C, 1000hrs | 8set*3 | 0 Fail | Pass |
| RSH | 260±5℃, 10±1s | 45*1 | 0 Fail | Pass |
| Solderability | 1.Precondition Condition C (8hrs) 2.Temperature and time: Pb-free, 245±5°C, 5±0.5s |
22*3 | 0 Fail | Pass |
| DPA | Random sample of parts that have successfully completed H3TRB or HAST, and TC | 4*1 | 0 Fail | Pass |