1.1 特性
- 增强型晶体管常闭电源开关
- 超高开关频率
- 无反向恢复
- 低栅极电荷,低输出电荷
- 符合JEDEC标准的工业应用资格
- ESD保护
- RoHS,无铅,符合REACH
650V GaN增强型功率晶体管
采用DFN 8×8 封装的650V增强型GaN功率晶体管
Platform Product (INN650TA030AH) | ||||
---|---|---|---|---|
Spin-off Product (INN650D070AH) | ||||
Test Items | Test Conditions |
Sample Size (Unit x Lot) | #Fail | Result |
HTRB | T=150°C, VDS= 560V | 77 x 1 | 0 Fail | Pass |
HTGB | T=150°C, VGS= 7V | 77 x 1 | 0 Fail | Pass |
HTGB(-) | T=150°C, VGS= -6V | 77 x 1 | 0 Fail | Pass |
LTRB | T=-40°C, VDS= 650V | 77 x 1 | 0 Fail | Pass |
LTGB | T=-40°C, VGS= 7V | 77 x 1 | 0 Fail | Pass |
LTGB (-) | T=-40°C, VGS= -6V | 77 x 1 | 0 Fail | Pass |
TC | -55 to +150°C, Air | 77 x 3 | 0 Fail | Pass |
HAST | T=130°C, RH=85%, VDS=100V | 77 x 3 | 0 Fail | Pass |
H3TRB | T=85°C, RH=85%, VDS=560V | 77 x 3 | 0 Fail | Pass |
HTSL | T=150°C | 77 x 3 | 0 Fail | Pass |
IOL | ΔTj ≥ 100℃, Ton=Toff=2min | 77 x 1 | 0 Fail | Pass |
Solderability | 1. Precondition: 8H 2. Pb-free, 245±5°C, 5±0.5S. |
10 x 1 | 0 Fail | Pass |
HTOL | Vplatform=450V,Irms=15A, Fre=65KHZ,Tj=125°C | 8sets x 3 | 0 Fail | Pass |
MSL3 | T=30°C, RH=60%,3 x reflow | 25 x 3 | 0 Fail | Pass |
HBM | All Pins | 3 x 1 | 0 Fail | Class 2 |
CDM | All Pins | 3 x 1 | 0 Fail | Class C3 |
Note: Package type Spin off have the same package process and design rules |