产品

INN650D070AH

650V GaN增强型功率晶体管

1. 产品描述

采用DFN 8×8 封装的650V增强型GaN功率晶体管

1.1 特性
  • 增强型晶体管常闭电源开关
  • 超高开关频率
  • 无反向恢复
  • 低栅极电荷,低输出电荷
  • 符合JEDEC标准的工业应用资格
  • ESD保护
  • RoHS,无铅,符合REACH
1.2 应用市场
  • AC-DC转换器
  • DC-DC转换器
  • DC-AC转换器
  • 高密度功率转换
  • 高效功率转换

2. 可靠性测试

Platform Product (INN650TA030AH)
Spin-off Product (INN650D070AH)
Test ItemsTest Conditions

Sample Size

(Unit x Lot)

#FailResult
HTRB T=150°C, VDS= 560V 77 x 1 0 Fail Pass
HTGB T=150°C, VGS= 7V 77 x 1 0 Fail Pass
HTGB(-) T=150°C, VGS= -6V 77 x 1 0 Fail Pass
LTRB T=-40°C, VDS= 650V 77 x 1 0 Fail Pass
LTGB T=-40°C, VGS= 7V 77 x 1 0 Fail Pass
LTGB (-) T=-40°C, VGS= -6V 77 x 1 0 Fail Pass
TC -55 to +150°C, Air 77 x 3 0 Fail Pass
HAST T=130°C, RH=85%, VDS=100V 77 x 3 0 Fail Pass
H3TRB T=85°C, RH=85%, VDS=560V 77 x 3 0 Fail Pass
HTSL T=150°C 77 x 3 0 Fail Pass
IOL ΔTj ≥ 100℃, Ton=Toff=2min 77 x 1 0 Fail Pass
Solderability 1. Precondition: 8H
2. Pb-free, 245±5°C, 5±0.5S.
10 x 1 0 Fail Pass
HTOL Vplatform=450V,Irms=15A, Fre=65KHZ,Tj=125°C 8sets x 3 0 Fail Pass
MSL3 T=30°C, RH=60%,3 x reflow 25 x 3 0 Fail Pass
HBM All Pins 3 x 1 0 Fail Class 2
CDM All Pins 3 x 1 0 Fail Class C3
Note: Package type Spin off have the same package process and design rules 

ParameterValue
VDS,max 650V
RDS(on),max @ VGS = 6 V 70mΩ
QG,typ @ VDS = 400 V 8.5nC
ID,pulse 60A
QOSS @ VDS = 400 V 94.7nC
Qrr @ VDS = 400 V 0nC
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