1.1 特性
- 8英寸硅基氮化镓技术
- 极低栅极电荷
- 超低导通电阻
- 超小体积
60V增强型GaN增强型功率晶体管
基于先进GaN技术的60V硅基氮化镓增强型高电子迁移率晶体管,采用FCQFN 4mmX3mm 封装。
Platform (S060E2.5) | ||||
---|---|---|---|---|
Product (INN060FQ043A) | ||||
Test Items | Test Conditions | Sample Size (Unit x Lot) | #Fail | Result |
MSL3 | Ta=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 3 | 0 Fail | Pass |
HTRB | Tj=125°C, VD=48V, 1000hrs | 77 x 3 | 0 Fail | Pass |
HTRB | Tj=150°C, VD=48V, 1000hrs | 77 x 1 | 0 Fail | Pass |
HTGB(+) | Tj=150°C, VG=6.0V, 1000hrs | 77 x 3 | 0 Fail | Pass |
HTGB(-) | Tj=150°C, VG=-4.0V, 1000hrs | 77 x 3 | 0 Fail | Pass |
TC | -40 to +125°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
H3TRB | Ta=85°C, RH=85%, VD=48V, 1000hrs | 77 x 3 | 0 Fail | Pass |
uHAST | T=130℃, RH=85%, 96hrs | 77 x 3 | 0 Fail | Pass |
Solderability | Pre-Con: 8hrs Pb-free: 245±5°C, 5±0.5s | 22 x 3 | 0 Fail | Pass |
DHTOL | BUCK, Vin=36V, Vout=18V, Fsw=600KHz, Tj=125°C, 1000hrs | 8 x 3 | 0 Fail | Pass |
HBM | All Pins | 3 x 1 | 0 Fail | Class 1B |
CDM | All Pins | 3 x 1 | 0 Fail | Class 2a |