1.1 Features
- 增强型晶体管-常闭型功率开关
- 极高的开关频率
- 零反向恢复电荷
- 低栅极电荷,低输出电荷
- 符合JEDEC标准的工业应用资格
- ESD 保护
- 符合RoHS、 Pb-free、 REACH等认证
700V 氮化镓增强型功率晶体管
采用TO-252 封装的700V 硅基氮化镓增强型功率晶体管
英诺赛科的增强型氮化镓场效应晶体管在参考硅基功率MOSFET的条件下经过了全面的可靠性测试,这些测试项目及结果如下所示:
Platform ( INN650D080BS/INN700D080BS) | ||||
---|---|---|---|---|
Test Items | Test Conditions |
Sample Size (Unit x Lot) | #Fail | Result |
HTRB | T=150°C, VDS= 560V, 1000hrs | 77 x 3 | 0 Fail | Pass |
HTGB | T=150°C, VGS= 7V, 1000hrs | 77 x 3 | 0 Fail | Pass |
*HTGB(-) | T=150°C, VGS= -6V, 1000hrs | 77 x 3 | 0 Fail | Pass |
TC | -55 to +150°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
HAST | T=130°C, RH=85%, VDS=100V, 96hrs | 77 x 3 | 0 Fail | Pass |
H3TRB | T=85°C, RH=85%, VDS=560V, 1000hrs | 77 x 3 | 0 Fail | Pass |
MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 3 | 0 Fail | Pass |
HBM | All Pins | 3 x 1 | 0 Fail | Class 2 |
CDM | All Pins | 3 x 1 | 0 Fail | Class C3 |
HTOL (LLC) | Tj=125°C, Input: 220 Vac, Vout=48V, Vplat=400V, fsw=130KHz | 10 x 3 | 0 Fail | Pass |
HTOL(QR-PFC) | Tj=125°C, Input: 90 Vac, Output: 20V/6.5A, F=120KHz(QR)/100KHz(PFC) | 10 x 3 | 0 Fail | Pass |
Note:*HTGB(-)was optional test item for device with bidirectional ESD design. | ||||
Spin-off Product | ||||
Test Items | Test Conditions |
Sample Size (Unit x Lot) | #Fail | Result |
HTRB | T=150°C, VDS= 560V, 168hrs | 77 x 1 | 0 Fail | Pass |
HTGB | T=150°C, VGS= 7V, 168hrs | 77 x 1 | 0 Fail | Pass |
New Package Type Qualification test | ||||
Test Items | Test Conditions |
Sample Size (Unit x Lot) | #Fail | Result |
TC | -55 to +150°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
HAST | T=130°C, RH=85%, VDS=100V, 96hrs | 77 x 3 | 0 Fail | Pass |
H3TRB | T=85°C, RH=85%, VDS=560V, 1000hrs | 77 x 3 | 0 Fail | Pass |
MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 3 | 0 Fail | Pass |
Note: Package type Spin off have the same package process and design rules |