产品

INN700TJ140C

700V 氮化镓增强型功率晶体管

1. 产品描述

采用TO-220F 封装的700V 硅基氮化镓增强型功率晶体管

1.1 特性
  • 增强型晶体管-常闭型功率开关
  • 极高的开关频率
  • 零反向恢复电荷
  • 低栅极电荷,低输出电荷
  • 符合JEDEC标准的工业应用资格
  • ESD 保护
  • 符合RoHS、 Pb-free、 REACH等认证
1.2 应用市场
  • AC-DC 转换器
  • DC-DC 转换器
  • 图腾柱PFC
  • 快充
  • 高密度功率转换
  • 高频率功率转换

2.可靠性测试

英诺赛科的增强型氮化镓场效应晶体管在参考硅基功率MOSFET的条件下经过了全面的可靠性测试,这些测试项目及结果如下所示:

Platform (  INN650D080BS/INN700D080BS)
Test ItemsTest Conditions

Sample Size

(Unit x Lot)

#FailResult
HTRB T=150°C, VDS= 560V, 1000hrs 77 x 3 0 Fail Pass
HTGB T=150°C, VGS= 7V, 1000hrs 77 x 3 0 Fail Pass
*HTGB(-) T=150°C, VGS= -6V, 1000hrs 77 x 3 0 Fail Pass
TC -55 to +150°C, Air, 1000Cys 77 x 3 0 Fail Pass
HAST T=130°C, RH=85%, VDS=100V, 96hrs 77 x 3 0 Fail Pass
H3TRB T=85°C, RH=85%, VDS=560V, 1000hrs 77 x 3 0 Fail Pass
MSL3 T=30°C, RH=60%, 3 x reflow, 192hrs 25 x 3 0 Fail Pass
HBM All Pins 3 x 1 0 Fail Class 2
CDM All Pins 3 x 1 0 Fail Class C3
HTOL (LLC) Tj=125°C, Input: 220 Vac, Vout=48V, Vplat=400V, fsw=130KHz 10 x 3 0 Fail Pass
HTOL(QR-PFC) Tj=125°C, Input: 90 Vac, Output: 20V/6.5A, F=120KHz(QR)/100KHz(PFC) 10 x 3 0 Fail Pass
Note:*HTGB(-)was optional test item for device with bidirectional ESD design.

Spin-off Product

Test ItemsTest Conditions

Sample Size

(Unit x Lot)

#FailResult
HTRB T=150°C, VDS= 560V, 168hrs 77 x 1 0 Fail Pass
HTGB T=150°C, VGS= 7V, 168hrs 77 x 1 0 Fail Pass
New Package Type Qualification test     
Test ItemsTest Conditions

Sample Size

(Unit x Lot)

#FailResult
TC -55 to +150°C, Air, 1000Cys 77 x 3 0 Fail Pass
HAST T=130°C, RH=85%, VDS=100V, 96hrs 77 x 3 0 Fail Pass
H3TRB T=85°C, RH=85%, VDS=560V, 1000hrs 77 x 3 0 Fail Pass
MSL3 T=30°C, RH=60%, 3 x reflow, 192hrs 25 x 3 0 Fail Pass
Note: Package type Spin off have the same package process and design rules 

ParameterValue
VDS,max 700V
RDS(on),max @ VGS = 6 V 140mΩ
QG,typ @ VDS = 400 V 3.5nC
ID,pulse 32A
QOSS @ VDS = 400 V 33nC
Qrr @ VDS = 400 V 0nC
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