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1.1 特性
- 8英寸硅基氮化镓技术
- 极低栅极电荷
- 超低导通电阻
- 体积非常小
产品
INN100FQ016A
100V增强型GaN功率晶体管
1. 产品描述
基于先进的GaN技术的100V硅基氮化镓增强型高电子迁移率晶体管，采用FCQFN 4mmX6mm 封装。
1.2 应用市场
- 高频DC-DC转换器
- 负载点
- 射频包络跟踪
- 电脑充电器
- 移动电源
- 电机驱动
2. 可靠性测试
| Platform (S100E2.0) | ||||
|---|---|---|---|---|
| Product (INN100FQ016A) | ||||
| Test Items | Test Conditions | Sample Size (Unit x Lot) | #Fail | Result |
| MSL3 | T=30°C, RH=60%, 3 x reflow | 25 x 3 | 0 Fail | Pass |
| HTRB | T=150°C, VD=80V | 77 x 1 | 0 Fail | Pass |
| HTGB | T=150°C, VG=5.5V | 77 x 1 | 0 Fail | Pass |
| PLTC | -55℃to +150℃ | 77 x 3 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VD=80V/120V | 77 x 3 | 0 Fail | Pass |
| HAST | T=130°C, RH=85%, VD=42V | 77 x 3 | 0 Fail | Pass |
| HTSL | T=150°C | 77 x 3 | 0 Fail | Pass |
| Solderability | 1.Precondition : 8H 2. Pb-feee,245±5℃,5±0.5S. |
10 x 1 | 0 Fail | Pass |
| HBM | All Pins | 3 x 1 | 0 Fail | Class 2 |
| CDM | All Pins | 3 x 1 | 0 Fail | Class C3 |
