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1.1 特性
- 8英寸硅基氮化镓技术
- 极低栅极电荷
- 超低导通电阻
- 体积非常小
产品
INN040FQ043A
40V增强型GaN增强型功率晶体管
1. 产品描述
基于先进的GaN技术的40V硅基氮化镓增强型高电子迁移率晶体管，采用FCQFN 4mmX3mm 封装。
1.2 应用市场
- 高频DC-DC转换器
- 负载点
- 射频包络跟踪
- 电脑充电器
- 移动充电宝
- 电机驱动器
2. 可靠性测试
| Platform (S040E2.5) | ||||
|---|---|---|---|---|
| Product (INN040FQ043A) | ||||
| Test Items | Test Conditions | Sample Size (Unit x Lot) | #Fail | Result |
| MSL3 | Ta=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 3 | 0 Fail | Pass |
| HTRB | Tj=150°C, VD=40V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| LTRB | Tj=-40°C, VD=32V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTGB(+) | Tj=150°C, VG=6.0V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTGB(-) | Tj=150°C, VG=-4.0V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| LTGB(+) | Tj=-40°C, VG=6.0V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| LTGB(-) | Tj=-40°C, VG=-4.0V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| TC | -40 to +125°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
| H3TRB | Ta=85°C, RH=85%, VD=32V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HAST | T=130°C, RH=85%, Vd=32V, 96hrs | 77 x 3 | 0 Fail | Pass |
| uHAST | T=130°C, RH=85%, 96hrs | 77 x 3 | 0 Fail | Pass |
| Solderability | Pre-Con: 8hrs Pb-free: 245±5°C, 5±0.5s | 25 x 3 | 0 Fail | Pass |
| DHTOL | BUCK, Vin=32V, Vout=13.5V, Iout=10A, Fsw=1.2MHz, Tj=125°C, 1000hrs | 22 x 3 | 0 Fail | Pass |
| HBM | All Pins | 3 x 1 | 0 Fail | Class 1B |
| CDM | All Pins | 3 x 1 | 0 Fail | Class 2a |
3. 150W Car/Notebook charger Buck-Boost参考方案
3.1 拓扑图
3.2 关键规格
高效率 98.1% @24Vin、19.2V/6A、600kHz；
可调频: 400KHz~1200KHz
可调压：3.3V~19.2V
3.3 应用领域
Car Charger；
Notebooks；
Tablet PCs
| Parameter | Value |
|---|---|
| VDS,max | 40V |
| RDS(on),max @ VG = 5 V | 4.3mΩ |
| QG,typ @ VDS = 20 V | 6.2nC |
| ID, Pulse | 160A |
| QOSS@ VDS = 20V | 14nC |
