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1.1 特性
- 8英寸硅基氮化镓技术
- 极低栅极电荷
- 超低导通电阻
- 零反向恢复电荷
产品
INN040FQ015A
40V 增强型GaN功率晶体管
1. 产品描述
基于先进的GaN技术的40V硅基氮化镓增强型高电子迁移率晶体管，采用FCQFN 5mmX4mm 封装。
1.2 应用市场
- 电池充电器
- 电池管理系统
- 笔记本
- 工业
2. 可靠性测试
| Platform (S040E2.5) | ||||
|---|---|---|---|---|
| Product (INN040FQ015A) | ||||
| Test Items | Test Conditions | Sample Size (Unit x Lot) | #Fail | Result |
| MSL3 | Ta=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 3 | 0 Fail | Pass |
| HTRB | Tj=150°C, VD=32V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTGB | Tj=150°C, VG=5.5V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| TC | -40 to +125°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
| H3TRB | Ta=85°C, RH=85%, VD=32V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| Solderability | Pre-Con: 8hrs Pb-free: 245±5°C, 5±0.5s | 25 x 3 | 0 Fail | Pass |
| DHTOL | BUCK, Vin=12V, Vout=5V, Iout=15A, Fsw=500KHz, Tj=125°C, 1000hrs | 8 x 3 | 0 Fail | Pass |
| HBM | All Pins | 3 x 1 | 0 Fail | Class 1B |
| CDM | All Pins | 3 x 1 | 0 Fail | Class 2a |