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1.1 特性
- 增强型晶体管-常闭型功率开关
- 极高的开关频率
- 零反向恢复电荷
- 低栅极电荷，低输出电荷
- 符合JEDEC标准的工业应用资格
- ESD 保护
- 符合RoHS、 Pb-free、 REACH等认证
产品
INN650D190A
650V 氮化镓增强型功率晶体管
1. 产品描述
采用DFN 8mm x 8mm 封装的650V 硅基氮化镓增强型功率晶体管
1.2应用市场
- DCM/BCM PFC
- AHB/LLC/QR Flyback/ACF DC-DC 转换器
- LED 驱动
- 快充
- 笔记本电脑/AIO 适配器
- 台式电脑/ATX/TV/电动工具电源
2. 可靠性测试
英诺赛科的增强型氮化镓场效应晶体管在参考硅基功率MOSFET的条件下经过了全面的可靠性测试，这些测试项目及结果如下所示：
| Platform ( INN650D140A ) | ||||
|---|---|---|---|---|
| Test Items | Test Conditions | Sample Size (Unit x Lot) | #Fail | Result |
| HTRB | T=150°C, VDS= 520V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTGB | T=150°C, VGS= 6.5V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| TC | -55 to +150°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
| HAST | T=130°C, RH=85%, VDS=100V, 96hrs | 77 x 3 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VDS=520V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 3 | 0 Fail | Pass |
| HBM | All Pins | 3 x 1 | 0 Fail | Class 2 |
| CDM | All Pins | 3 x 1 | 0 Fail | Class C3 |
| HTOL（QR-PFC） | Tj=125°C, Input: 90 Vac, Output: 20V/6.5A, F=120KHz(QR)/100KHz(PFC) | 10 x 3 | 0 Fail | Pass |
|
Spin-off Product( INN650D190A) | ||||
| Test Items | Test Conditions |
Sample Size/Product (Unit x Lot)/Product | #Fail | Result |
| HTRB | T=150°C, VDS= 520V, 168hrs | 77 x 1 | 0 Fail | Pass |
| HTGB | T=150°C, VGS= 6.5V, 168hrs | 77 x 1 | 0 Fail | Pass |
| TC | -55 to +150°C, Air, 1000Cys | 77 x 1 | 0 Fail | Pass |
| HAST | T=130°C, RH=85%, VDS=100V, 96hrs | 77 x 1 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VDS=520V, 1000hrs | 77 x 1 | 0 Fail | Pass |
| MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 1 | 0 Fail | Pass |
