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* Models provided by Innoscience Inc. are not warranted by      *
* Innoscience Inc.
* as fully representing all of the specifications and operating *
* characteristics of the semiconductor product to which the     *
* model relates. The model describe the characteristics of a    *
* typical device.                                               *
* In all cases, the current data sheet information for a given  *
* device is the final design guideline and the only actual      *
* performance specification.                                    *
* Altough models can be a useful tool in evaluating device      *
* performance, they cannot model exact device performance under *
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*                                                               *
* The Simulation Model is subject to change without notice.     *
* In addition, models can be a useful tool in evaluating device *
* performance, they cannot reflect the accurate device          *
* performance under all conditions, nor are they intended to    *
* replace bread boarding for final verification.                *                      
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* Version History:
*    1:   Created the INN100W12	Model  2020-11-05by Yudi Yan
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simulator lang=spectre
subckt INN100W12 (gatein drainin sourcein)
.param LeakI=2.33 Ipara=27.156 k2=2.4 k3=0.15 Rds=0.0039891 Rds_factor=0.32
 + IdsTc=0.0039 RdsTc=-0.0065 k2Tc=0.0008 k4=1.6664 k5=-0.1 k5_TC=0 rg=0.5
 + Dgs1=4.3e-07 Dgs2=2.6e-13 Dgs3=0.8 Dgs4=0.23
 + Dgd1=4.3e-07 Dgd2=2.6e-13 Dgd3=0.8 Dgd4=0.23
 + Cgs1=5.0058e-10 Cgs2=3.2815e-10 Cgs3=1.8205 Cgs4=0.16548
 + Cgs5=-4.7252e-11 Cgs6=-14.439 Cgs7=1.9352
 + Cgd1=1.90576e-12 Cgd2=9.4645e-12 Cgd3=-7.4612 Cgd4=106.12
 + Cgd5=6.4870e-11 Cgd6=-10.637 Cgd7=3.1352
 + Cgd8=4.1413e-13 Cgd9=-273.42 Cgd10=8.3172
 + Csd1=1.8653e-10 Csd2=1.5015e-10 Csd3=-0.73562 Csd4=44.646
 + Csd5=3.1565e-10 Csd6=-17.682 Csd7=1.9631

rd (Drain drain_rd) resistor r=((1-Rds_factor)*Rds*(1-RdsTc*(Temp-25)))
rs (Source source_rs) resistor r=(Rds_factor*Rds*(1-RdsTc*(Temp-25)))
rg (Gate gate_rg) resistor r=(rg)

Rcsdconv (drain_rd source_rs) resistor r=(100000Meg/LeakI)
Rcgsconv (gate_rg source_rs) resistor r=(100000Meg/LeakI)
Rcgdconv (gate_rg drain_rd) resistor r=(100000Meg/LeakI)

gswitch drain_rd source_rs I=if(v(drain_rd,source_rs)>0 ?
+	(Ipara*(1-IdsTc*(Temp-25))*log(1.0+exp((v(gate_rg,source_rs)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+	v(drain_rd,source_rs)/(1 + max(k4+k5*(1-k5_TC*(Temp-25))*v(gate_rg,source_rs),0.2)*v(drain_rd,source_rs))) :
+	(-Ipara*(1-IdsTc*(Temp-25))*log(1.0+exp((v(gate_rg,drain_rd)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+	v(source_rs,drain_rd)/(1 + max(k4+k5*(1-k5_TC*(Temp-25))*v(gate_rg,drain_rd),0.2)*v(source_rs,drain_rd))))

ggsdiode gate_rg source_rs I=if( v(gate_rg,source_rs)>10 ?
+	(0.5*LeakI/1077*(Dgs1*(exp((10.0)/Dgs3)-1)+Dgs2*(exp((10.0)/Dgs4)-1))) :
+	(0.5*LeakI/1077*(Dgs1*(exp((v(gate_rg,source_rs))/Dgs3)-1)+Dgs2*(exp((v(gate_rg,source_rs))/Dgs4)-1))))

ggddiode gate_rg drain_rd I=if( v(gate_rg,drain_rd)>10 ?
+	(0.5*LeakI/1077*(Dgs1*(exp((10.0)/Dgs3)-1)+Dgs2*(exp((10.0)/Dgs4)-1))) :
+	(0.5*LeakI/1077*(Dgs1*(exp((v(gate_rg,drain_rd))/Dgs3)-1)+Dgs2*(exp((v(gate_rg,drain_rd))/Dgs4)-1))))

C_GS       	(gate_rg source_rs)  bsource c=(Cgs1)
C_CGS1     	(gate_rg source_rs)  bsource q=(0.5*Cgs2*Cgs4*log(1+exp((v(gate_rg,source_rs)-Cgs3)/Cgs4))+
+			Cgs5*Cgs7*log(1+exp((v(source_rs,drain_rd)-Cgs6)/Cgs7)))

C_GD      	(gate_rg drain_rd)  bsource c=(Cgd1)
C_CGD1    	(gate_rg drain_rd)  bsource q=(0.5*Cgs2*Cgs4*log(1+exp((v(gate_rg,drain_rd)-Cgs3)/Cgs4))+
+	        Cgd2*Cgd4*log(1+exp((v(gate_rg,drain_rd)-Cgd3)/Cgd4))+
+           Cgd5*Cgd7*log(1+exp((v(gate_rg,drain_rd)-Cgd6)/Cgd7))+
+           Cgd8*Cgd10*log(1+exp((v(gate_rg,drain_rd)-Cgd9)/Cgd10)))

C_SD       	(source_rs drain_rd)  bsource c=(Csd1)
C_CSD1		(source_rs drain_rd)  bsource q=(Csd2*Csd4*log(1+exp((v(source_rs,drain_rd)-Csd3)/Csd4))+
+			Csd5*Csd7*log(1+exp((v(source_rs,drain_rd)-Csd6)/Csd7)))

ends INN100W12
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